Structure of VCSEL and method for manufacturing the same
US9929536B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2017 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Jun 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.