High frequency attenuator
US9929720B2 · kind B2 · utility
0Cited by
9References
22Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 8, 2015 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Oct 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/211
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An attenuator includes: a first circuit including a common collector or common drain amplifier formed of a first transistor having its control node connected to an input of the attenuator and its emitter or source connected to an intermediate node of the attenuator; and a second circuit including a common collector or common drain amplifier formed of a second transistor having its emitter or source connected to the intermediate node and its control node connected to an output of the attenuator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.