Thermal metal ground for integrated circuit resistors
US9930769B2 · kind B2 · utility
1Cited by
4References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 14, 2014 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Jul 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Metal thermal grounds are used for dissipating heat from integrated-circuit resistors. The resistors may be formed using a front end of line layer, for example, a titanium-nitride layer. A metal region (e.g., in a first metal layer) is located over the resistors to form a heat sink. An area of thermal posts connected to the metal region is also located over the resistor. The metal region can be connected to the substrate of the integrated circuit to provide a low impedance thermal path out of the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.