Method of forming fine patterns
US9934986B2 · kind B2 · utility
0Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2016 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Feb 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming fine patterns, which is capable of easily forming a plurality of patterns repeatedly with a fine pitch when forming patterns necessary for manufacturing a highly integrated semiconductor device exceeding a resolution limit of a photolithography process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.