Optimized buffer layer for high mobility field-effect transistor

US9935192B2 · kind B2 · utility

Assignees

• THALES · FR
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Jean-Claude Jacquet · Orsay, FR
• Raphaël Aubry · Les Ulis, FR
• Piero GAMARRA · Palaiseau, FR
• Olivier Jardel · Palaiseau, FR
• Stéphane PIOTROWICZ · Voisins-le-Bretonneux, FR

Key dates

• Filing date: Apr 3, 2015
• Grant date: Apr 3, 2018
• Expiry date: Apr 3, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A stack along a z-axis for a high-electron-mobility field-effect transistor, comprises: a buffer layer comprising a first semiconductor material comprising a binary, ternary or quaternary nitride compound having a first bandgap, a barrier layer comprising a second semiconductor material comprising a binary, ternary or quaternary nitride compound and having a second bandgap, the second bandgap wider than the first bandgap, a heterojunction between the buffer and barrier layers and, a two-dimensional electron gas located in an XY plane perpendicular to the z-axis and in the vicinity of the heterojunction wherein: the buffer layer comprises a zone comprising fixed negative charges of density per unit volume higher than or equal to 1017 cm−3, the zone having a thickness smaller than or equal to 200 nm, the product of multiplication of the density per unit volume of fixed negative charges by the thickness of the zone between 1012 cm−2 and 3.1013 cm−2.