Photoelectric conversion device
US9935219B2 · kind B2 · utility
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2References
8Claims
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Assignee
Inventors
Key dates
| Filing date | Oct 10, 2016 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Oct 10, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device 11 according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles 3a coupled together as a light-absorbing layer 3, each of the semiconductor particles 3a including a group I-III-VI compound, each of the semiconductor particles 3a having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.