Resistive random access memory

US9935265B2 · kind B2 · utility

Assignee

• NATIONAL SUN YAT-SEN UNIVERSITY

Inventors

• Ting-Chang Chang · Hsinchu, TW
• Kuan-Chang Chang
• Tsung-Ming Tsai
• Chih-Hung Pan · Taichung, TW
• Po-Hsun Chen · Taipei, TW

Key dates

• Filing date: Oct 12, 2016
• Grant date: Apr 3, 2018
• Expiry date: Oct 12, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive random access memory overcomes the low reliability of the conventional resistive random access memory. The resistive random access memory includes a resistance changing layer and two electrode layers. The two electrode layers are coupled with the resistance changing layer. Each of the two electrode layers includes a doping area containing a heavy element. In such an arrangement, the above deficiency can be overcome.