Silicon electro-optical modulator
US9939666B2 · kind B2 · utility
9Cited by
6References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 6, 2014 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jan 30, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0156
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are designs and methods of fabrication of silicon carrier-depletion based electro-optical modulators having doping configurations that produce modulators exhibiting desirable modulation efficiency, optical absorption loss and bandwidth characteristics. The disclosed method of fabrication of a modulator having such doping configurations utilizes counter doping to create narrow regions of relatively high doping levels near a waveguide center.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.