Process and system for uniformly crystallizing amorphous silicon substrate by fiber laser
US9941120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2015 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jul 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1618
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The inventive system for crystallizing an amorphous silicon (a-Si) film is configured with a quasi-continuous wave fiber laser source operative to emit a film irradiating pulsed beam. The fiber laser source is operative to emit a plurality of non-repetitive pulses incident on the a-Si. In particular, the fiber laser is operative to emit multiple discrete packets of film irradiating light at a burst repetition rate (BRR), and a plurality of pulses within each packet emitted at a pulse repetition rate (PRR) which is higher than the BRR. The pulse energy, pulse duration of each pulse and the PRR are controlled so that each packet has a desired packet temporal power profile (W/cm2) and packet energy sufficient to provide transformation of a-Si to polysilicon (p-Si) at each location of the film which is exposed to at least one packets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.