Semiconductor device
US9941124B1 · kind B1 · utility
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2References
2Claims
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Key dates
| Filing date | Apr 26, 2017 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Apr 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor base body having a first main surface and a second main surface, the first main surface and the second main surface being opposite with each other; a Schottky electrode that is disposed on the first main surface and forms a Schottky junction with the semiconductor base body; and a barrier metal layer that is brought into ohmic contact with the first main surface around the Schottky electrode and covers a side surface of the Schottky electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.