Methods of forming a hard mask layer and of fabricating a semiconductor device using the same
US9941135B2 · kind B2 · utility
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11References
18Claims
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Key dates
| Filing date | Aug 31, 2015 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Apr 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (N2O). A source of carbon and the nitrous oxide (N2O) are introduced to the substrate under a plasma ambient of an inert gas. The amorphous carbon layer has a nitrogen content ranging from about 0.05 at % to about 30 at % and an oxygen content ranging from about 0.05 at % to about 10 at %. In forming a semiconductor device, the hard mask layer is patterned, and a target layer beneath the hard mask layer is etched using the patterned hard mask layer as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.