Method for manufacturing semiconductor device by epitaxial lift-off using plane dependency of III-V compound
US9941168B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2017 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jun 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30635
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device by epitaxial lift-off includes: forming a sacrificial layer containing an III-V compound on a first substrate, forming a device layer on the sacrificial layer, patterning the sacrificial layer and the device layer into a shape having an extending portion along a first direction determined based on a surface orientation of the III-V compound of the sacrificial layer, bonding the patterned device layer onto a second substrate, and etching the sacrificial layer by using an etching solution in a state where the device layer is bonded onto the second substrate, to remove the sacrificial layer and the first substrate. Using the method for manufacturing a semiconductor device, it is possible to improve a process yield and increase a process speed by using the difference in etch rates depending on crystal orientation, which is an inherent characteristic of an III-V compound, during an ELO process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.