Vertical metal insulator metal capacitor
US9941195B2 · kind B2 · utility
15Cited by
63References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2016 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Mar 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method are disclosed herein. The semiconductor device includes a device die, a molding layer surrounding the device die, a plurality of first vertical conductive structures formed within the molding layer, and a plurality of second vertical conductive structures formed within the molding layer. The first vertical conductive structures and the second vertical conductive structures are interlaced with each other, and an insulating structure is formed between the first vertical conductive structures and the second vertical conductive structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.