Method of manufacturing thin film transistor substrate
US9941313B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2016 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jan 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6733
Abstract
A method of manufacturing a thin film transistor substrate includes forming a semiconductor pattern on a substrate, wherein the semiconductor pattern includes a first area, a second area, and a third area, wherein the second area and the third area are located on each side of the first area; forming an insulating layer on the substrate to cover the semiconductor pattern; forming a metal pattern layer on the insulating layer using a first photosensitive pattern; doping the semiconductor pattern with first impurities using the first photosensitive pattern; forming a gate electrode by patterning the metal pattern layer using a second photosensitive pattern; and doping the semiconductor pattern with second impurities having a lower concentration than the first impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.