Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device
US9941361B2 · kind B2 · utility
4Cited by
1References
8Claims
0Family size
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Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Feb 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for fabricating a semiconductor substrate according to an embodiment, an SiC substrate is formed by vapor growth and C (carbon) is introduced into the surface of the SiC substrate to form an n-type SiC layer on the SiC substrate by an epitaxial growth method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.