Semiconductor device having a trench MOS barrier Schottky diode
US9941381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2016 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Apr 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A semiconductor device having a trench MOS barrier Schottky diode includes a semiconductor volume of a first conductivity type, the semiconductor volume (i) having a first side which is covered with a metal layer, and (ii) including at least one trench which extends in the first side and is at least partially filled with metal and/or with a semiconductor material of a second conductivity type. The trench has at least one wall section which includes an oxide layer, at least in areas. At least one area, situated next to the trench, of the first side covered with the metal layer has a layer, situated between the metal layer and the semiconductor volume, made of a first semiconductor material of the second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.