Metal-semiconductor-metal (MSM) heterojunction diode
US9941382B2 · kind B2 · utility
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10References
20Claims
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Key dates
| Filing date | Dec 14, 2016 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Dec 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
Abstract
In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.