Semiconductor device and method for fabricating the same
US9941384B2 · kind B2 · utility
6Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2015 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Aug 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
A semiconductor device includes a first III-V compound layer on a substrate, a second III-V compound layer on the first III-V compound layer, in which a material of the first III-V compound layer is different from that of the second III-V compound layer, a gate metal stack disposed on the second III-V compound layer, a source contact and a drain contact disposed at opposite sides of the gate metal stack, a gate field plate disposed between the gate metal stack and the drain contact, an anti-reflective coating (ARC) layer formed on the source contact and the drain contact, and an etch stop layer formed on the ARC layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.