Semiconductor device and method of manufacturing the same
US9941400B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2015 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jun 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate having a rear side on which a grounded electrode is disposed; a semiconductor layer disposed on a front side of the substrate and including an active region and an inactive region; a plurality of source electrodes disposed in the active region; a drain electrode including a plurality of first portions disposed in the active region and a second portion disposed in the inactive region; a gate electrode including a plurality of first portions disposed in the active region and a second portion disposed in the inactive region; and a plurality of source electrode pads having the same number as the plurality of source electrodes and disposed in the inactive region and each being connected to a corresponding source electrode directly. A plurality of through holes electrically connecting the plurality of source electrodes and the grounded electrode respectively are disposed in the plurality of source electrode pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.