Patent · US Active

Composite quantum-dot materials for photonic detectors

US9941433B2 · kind B2 · utility

15Cited by
3References
33Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 7, 2016
Grant dateApr 10, 2018
Priority date
Expiry dateSep 7, 2036

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/954
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A composite quantum-dot photodetector comprising a substrate with a colloidally deposited thin film structure forming a photosensitive region, the thin film containing at least one type of a nanocrystal quantum-dot, whereby the nanocrystal quantum dots are spaced by ligands to form a lattice, and the lattice of the quantum dots has an infill material that forms an inorganic matrix that isolates the nanocrystal quantum dots from atmospheric exposure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.