Method for randomly texturing a semiconductor substrate
US9941445B2 · kind B2 · utility
2Cited by
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12Claims
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Key dates
| Filing date | Jun 2, 2015 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jun 2, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The invention relates to a method for texturing a semiconductor substrate (1), comprising steps consisting in forming a plurality of cavities of random shapes, depths and distribution, in an etch mask (2), by means of non-homogeneous reactive-ion etching, forming a first rough random design, and etching the substrate using the etch mask, by means of reactive-ion etching, in such a way as to transfer the first rough random design into the substrate and to produce a second rough random design (200), comprising cavities (20) of random shapes, depths (d2r) and distribution, on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.