Patent · US Active

Manufacture method of quantum dot light-emitting diode display and quantum dot light-emitting diode display

US9941490B1 · kind B1 · utility

0Cited by
1References
14Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 23, 2016
Grant dateApr 10, 2018
Priority date
Expiry dateNov 19, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K71/12

Abstract

The disclosure provides a manufacture method of a quantum dot light-emitting diode display and a quantum dot light-emitting diode display. The manufacture method of a quantum dot light-emitting diode display provided by the disclosure forms a light-emitting layer by a quantum dot thin film prepared by filming a metal complex solution, compared with a conventional ink jet printing method with quantum dot ink, process parameters can be adjusted easily, a process can be simple, costs can be reduced, three primary colors R, G, B can be adjusted by precisely controlling sub pixel levels, a color film can be omitted, which can be a better industrial design in weight and thickness. According to the quantum dot light-emitting diode display provided by the disclosure, the light-emitting layer is formed by a quantum dot thin film, which can offer the quantum dot light-emitting diode display excellent quality in display, the process is simple.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.