Manufacture method of quantum dot light-emitting diode display and quantum dot light-emitting diode display
US9941490B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 23, 2016 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Nov 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/12
Abstract
The disclosure provides a manufacture method of a quantum dot light-emitting diode display and a quantum dot light-emitting diode display. The manufacture method of a quantum dot light-emitting diode display provided by the disclosure forms a light-emitting layer by a quantum dot thin film prepared by filming a metal complex solution, compared with a conventional ink jet printing method with quantum dot ink, process parameters can be adjusted easily, a process can be simple, costs can be reduced, three primary colors R, G, B can be adjusted by precisely controlling sub pixel levels, a color film can be omitted, which can be a better industrial design in weight and thickness. According to the quantum dot light-emitting diode display provided by the disclosure, the light-emitting layer is formed by a quantum dot thin film, which can offer the quantum dot light-emitting diode display excellent quality in display, the process is simple.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.