Imaging sensor with in-pixel amplification
US9942502B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2015 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Feb 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel architecture having an in-pixel amplifier comprising an NMOS transistor and a depletion-mode NMOS load is disclosed. In one aspect, the pixel architecture comprises a pixel core including a pixel photodiode for generating an output signal in accordance with incident light. Further, the in-pixel amplifier is connected to a pixel core to amplify the output signal before it is stored in a column buffer before being read out at output of the pixel architecture. By having an in-pixel amplifier that can be used for amplification of the output signal inside the pixel architecture, a larger output value is obtained which may be stored inside the pixel architecture on a small capacitor with improved signal-to-noise performance. This in-pixel amplification can also improve the quality of stored signals for global shutter operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.