Free-standing silicon oxide membranes and methods of making and using same
US9945030B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Nov 19, 2014 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Nov 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is a free-standing silicon oxide film that is under tensile stress. Also, provided are methods of making a free-standing silicon oxide film that is under tensile stress. The methods use low-power PECVD deposition of silicon oxide. Methods of imaging one or more objects (e.g., cells) using a free-standing silicon oxide film that is under tensile stress is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.