Patent · US Active

Resistive switching for MEMS devices

US9945727B2 · kind B2 · utility

1Cited by

1References

14Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Ashwin Samarao · Sunnyvale, US
Gary O'Brien · Palo Alto, US
Ando Feyh · Palo Alto, US
Fabian Purkl · Gerlingen, DE
Gary Yama · Mountain View, US

Key dates

Filing date	Dec 10, 2015
Grant date	Apr 17, 2018
Priority date	—
Expiry date	Dec 10, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG01J2005/202
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A MEMS device includes a bolometer attached to a silicon wafer by a base portion of at least one anchor structure. The base portion comprises a layer stack having a metal-insulator-metal (MIM) configuration such that the base portion acts as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.