Method for fabricating waveguide construction
US9946021B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2017 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Jul 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a waveguide construction is described and has steps of: providing a layered structure by: forming a first-type InGaAsP layer on a substrate, forming a first-type InP layer on the first-type InGaAsP layer, forming an active layer containing gallium on the first-type InP layer, forming a second-type InP layer on the active layer, and forming a second-type InGaAsP layer on the second-type InP layer; forming an SiO2 patterned layer having SiO2 regions and at least one channel facing toward a desired direction and formed between the SiO2 regions on the second-type InGaAsP layer; and performing a rapid thermal annealing treatment on the layered structure formed with the SiO2 patterned layer. The rapid thermal annealing treatment has a treating temperature between 720° C. and 760° C. and a treating time between 60 and 240 seconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.