Composition for forming resist underlayer film for nanoimprint
US9946158B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2014 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Dec 15, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2051
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein is a composition for forming a resist underlayer film used as an underlayer of a resist for nanoimprint in nanoimprint lithography of a pattern forming process by heat-baking, light-irradiation, or a combination thereof to form the resist underlayer film. The composition includes a silicon atom-containing polymerizable compound (A), a polymerization initiator (B), and a solvent (C). The polymerizable compound (A) may contain silicon atoms in a content of 5 to 45% by mass. The polymerizable compound (A) may be a polymerizable compound having at least one cation polymerizable reactive group, a polymerizable compound having at least one radical polymerizable reactive group, or a combination thereof, and the polymerization initiator (B) may be a photopolymerization initiator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.