Nonvolatile storage device and method of controlling the same
US9947396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2013 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Aug 9, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To improve a reading speed and a writing speed while preventing occurrence of disturbance in a resistance storage element, specifically, a nonvolatile storage device that has a memory having at least one nonvolatile resistance storage element and a control unit configured to write a high resistance state or a low resistance state to the resistance storage element, wherein the control unit applies a bias to the resistance storage element in a verification operation carried out after writing the high resistance state, or applies a bias to the resistance storage element in a verification operation carried out after writing the low resistance state, these biases being in directions opposite to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.