Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby
US9947540B2 · kind B2 · utility
12Cited by
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20Claims
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Key dates
| Filing date | Jul 31, 2015 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Dec 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.