Semiconductor structure having a test structure formed in a group III nitride layer
US9947600B2 · kind B2 · utility
0Cited by
7References
5Claims
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Key dates
| Filing date | Jun 14, 2017 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Jun 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an embodiment, a semiconductor structure includes a support substrate comprising a surface adapted to support epitaxial growth of a Group III nitride, one or more epitaxial Group III nitride layers arranged on the surface and supporting a plurality of transistor devices assembled upon the support substrate, and a test structure formed in a Group III nitride layer. The test structure includes a plurality of trenches configured to provide an optical diffraction grating when illuminated by UV light. The trenches have a parameter corresponding to a parameter of a feature of the transistor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.