Patent · US Active

Guard ring structure and method for forming the same

US9947627B2 · kind B2 · utility

1Cited by
4References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 20, 2016
Grant dateApr 17, 2018
Priority date
Expiry dateJun 20, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/221
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A guard ring structure having a semiconductor substrate with a circuit region encircled by a first ring and a second ring. At least one of the first and second ring includes: a plurality of separated doping regions formed in various top portions of the semiconductor substrate, providing P-N junction or N-P junction on bottom of the plurality of separated doping regions; and an interconnect element formed over the semiconductor substrate, covering at least portion of the plurality of separated doping regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.