Method of manufacturing semiconductor device with separately formed insulating films in main circuit and memory regions
US9947679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2015 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Sep 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/41
Abstract
An improvement is achieved in the performance of a semiconductor device. Over a first insulating film formed over a main surface of a semiconductor substrate located in a memory formation region and having an internal charge storage portion and over a second insulating film formed over the main surface of the semiconductor substrate located in a main circuit formation region, a conductive film is formed. Then, in the memory formation region, the conductive film and the first insulating film are patterned to form a first gate electrode and a first gate insulating film while, in the main circuit formation region, the conductive film and the second insulating film are left. Then, in the main circuit formation region, the conductive film and the second insulating film are patterned to form a second gate electrode and a second gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.