Solid-state imaging device, method of manufacturing the same, and electronic apparatus
US9947703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Feb 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a solid-state imaging device that can be made smaller in size, a method of manufacturing the solid-state imaging device, and an electronic apparatus.The solid-state imaging device includes a photoelectric conversion film that performs photoelectric conversion of light emitted from the back surface side of the semiconductor substrate. Also, in each pixel, a charge accumulation layer is formed to be in contact with the photoelectric conversion film on the back surface of the semiconductor substrate, a transfer path unit is formed to extend from the charge accumulation layer to a point near the front surface of the semiconductor substrate, and a memory unit is disposed near the back surface side of the semiconductor substrate, with a charge transfer gate being interposed between the memory unit and the transfer path unit. Then, the photoelectric conversion film is formed by stacking a layer formed with a material having a great light blocking effect on the back surface of the semiconductor substrate. The present technology can be applied to back-illuminated CMOS image sensors in global shutter mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.