Method of recovery of MOTFT backplane after a-Si photodiode fabrication
US9947704B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2016 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Oct 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A method of fabricating a structure including a high mobility backplane and a-Si photodiode imager includes forming a matrix of metal oxide thin film transistors on the surface of a rigid support member, depositing a planarizing layer on the matrix of transistors that is either porous or permissive/diffusive to oxygen at temperatures below approximately 200° C., and fabricating a matrix of passivated a-Si photodiodes over the matrix of transistors and electrically connected one each photodiode to each of the transistors. A continuous path is provided through the planarizing layer from the exterior of the structure to each of the transistors and the structure is annealed at a temperature below 200° C. in an oxygen ambient to move oxygen from the oxygen ambient to an active layer of each of the transistors and repair loss of oxygen damage to the transistors caused by the fabrication of the passivated a-Si photodiodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.