Pixel structure having high aperture ratio and circuit
US9947737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2017 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Jun 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/122
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel circuit and a pixel structure having high aperture ratio are provided. A first gate electrode, a layer including a first source electrode and a first drain electrode, and an etching stopper layer, a first semiconductor layer, and a gate isolation layer sandwiched between the first gate electrode and the layer of the first source electrode and the first drain electrode construct a first thin film transistor. A second gate electrode, a layer including a second source electrode and a second drain electrode, and an etching stopper layer, a second semiconductor layer, and the gate isolation layer sandwiched between the second gate electrode and the layer of the second source electrode and the second drain electrode construct a second thin film transistor. An isolation layer with a flat top surface is sandwiched between a transparent electrode and a pixel electrode to form a transparent capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.