Semiconductor device having milti-height structure and method of manufacturing the same
US9947759B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2017 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Mar 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A semiconductor device having semiconductor device having a multi-height structure is provided. The semiconductor device having a multi-height structure includes a semiconductor substrate. A first structure and a second structure are respectively disposed on the semiconductor substrate and connected to each other. The second structure includes a limiting layer disposed on the upper surface of the semiconductor substrate, a first polysilicon layer disposed conformally on the limiting layer and the semiconductor substrate, and a second polysilicon layer disposed conformally on the first polysilicon layer. A ridge of the second polysilicon layer is disposed near an edge of the second structure beside the first structure, vertically aligned with the limiting layer and defined as a limiting block. A bottom anti-reflection coating (BARC) layer of a low-viscosity material blanketly overlying a top surface of the second structure has an external surface substantially parallel to the top surface of the second structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.