Junction field effect transistor and manufacturing method therefor

US9947785B2 · kind B2 · utility

Assignee

• CSMC TECHNOLOGIES FAB2 CO., LTD. · CN

Inventors

• Guangtao Han · Hangzhou City, CN
• Guipeng Sun · Xinwu District, CN

Key dates

• Filing date: Jun 30, 2015
• Grant date: Apr 17, 2018
• Expiry date: Jun 30, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/156

Abstract

The present invention relates to a junction field effect transistor. The junction field effect transistor comprises a substrate (10), a buried layer in the substrate, a first well region (32) and a second well region (34) that are on the buried layer, a source lead-out region (50), a drain lead-out region (60), and a first gate lead-out region (42) that are in the first well region (32), and a second gate lead-out region (44) in the second well region (34). A Schottky junction interface (70) is disposed on the surface of the first well region (32). The Schottky junction interface (70) is located between the first gate lead-out region (42) and the drain lead-out region (60), and is isolated from the first gate lead-out region (42) and the drain lead-out region (60) by means of isolation structures. The present invention also relates to a manufacturing method for a junction field effect transistor.