Devices and methods for a power transistor having a schottky or schottky-like contact
US9947787B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2017 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Apr 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Devices, structures, and methods thereof for providing a Schottky or Schottky-like contact as a source region and/or a drain region of a power transistor are disclosed. A power transistor structure comprises a substrate of a first dopant polarity, a drift region formed on or within the substrate, a body region formed on or within the drift region, a gate structure formed on or within the substrate, a source region adjacent to the gate structure, a drain region formed adjacent to the gate structure. At least one of the source region and the drain region is formed from a Schottky or Schottky-like contact substantially near a surface of the substrate, comprising a silicide layer and an interfacial dopant segregation layer. The Schottky or Schottky-like contact is formed by low-temperature annealing a dopant segregation implant in the source and/or drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.