Thin-film transistor
US9947795B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Dec 22, 2016 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Dec 22, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to one embodiment, a thin-film transistor includes a first insulating film, an oxide semiconductor layer provided on the first insulating film and a second insulating film provided on the oxide semiconductor layer, and at least one of the first insulating film and the second insulating film includes a first region in contact with the oxide semiconductor layer and a second region further distant from the oxide semiconductor layer than the first region, and the second region has an argon concentration higher than that of the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.