Manufacturing method of semiconductor device, manufacturing method of electronic appliance, semiconductor device, display device, memory device, and electronic appliance
US9947802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2016 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Sep 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is manufactured by forming an oxide layer, forming an insulating layer and a sacrificial layer over the oxide layer, forming a conductive layer over the insulating layer and the sacrificial layer, and performing heat treatment after the formation of the conductive layer so that a first mixed layer is formed in a region of the oxide layer that is in contact with the conductive layer and a second mixed layer is formed in a region of the sacrificial layer that is in contact with the conductive layer. The first mixed layer includes at least one of elements included in the conductive layer. The second mixed layer includes at least one of elements included in the conductive layer. The resistance value of the first mixed layer is smaller than that of the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.