High concentration doping in silicon

US9947821B2 · kind B2 · utility

Assignee

• NewSouth Innovations Pty Limited · AU

Inventors

• Brett Jason Hallam · Sydney, AU
• Matthew Edwards · Mona Vale, AU
• Stuart Ross Wenham · Parramatta, AU
• Phillip George Hamer · Sydney, AU
• Catherine Emily Chan · Sydney, AU
• Chee Mun Chong · Sydney, AU
• Pei Hsuan Lu · Sydney, AU
• Ly Mai · Sydney, AU
• Li Hui Song · Sydney, AU
• Adeline Sugianto · Sydney, AU
• Alison Maree Wenham · Sydney, AU
• Guang Qi Xu · Sydney, AU

Key dates

• Filing date: Jul 24, 2014
• Grant date: Apr 17, 2018
• Expiry date: Jul 24, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all of the dopant atoms in the doped crystalline silicon region is achieved by introducing hydrogen atoms into the doped 5 crystalline silicon region, whereby the hydrogen coulombicly bonds with some or all of the dopant atoms to deactivate the respective dopant atoms. Deactivated dopant atoms may be reactivated by heating and illuminating the doped crystalline silicon region to break at least some of the dopant-hydrogen bonds while maintaining conditions to create a high concentration of neutral hydrogen atoms whereby 10 some of the hydrogen atoms diffuse from the doped crystalline silicon region without rebinding to the dopant atoms.