Magnetoresistive effect device
US9948267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2017 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Feb 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect device includes at least one magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer, a first port, a second port, a first signal line which is connected to the first port and through which high-frequency current corresponding to a high-frequency signal input into the first port flows, a second signal line, and a direct-current input terminal. The magnetoresistive effect element is arranged so that a high-frequency magnetic field occurring from the first signal line is applied to the magnetization free layer. The magnetoresistive effect element is connected to the second port via the second signal line. The direct-current input terminal is connected to the magnetoresistive effect element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.