Bidirectional integrated CMOS switch
US9948292B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 11, 2014 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Jun 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0054
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A bidirectional integrated CMOS switch is provided which is capable of switching voltages beyond the range of the supply and ground potentials. The switch is composed of NMOS and PMOS transistors as the switch conductor path, a diode bridge, and control circuitry to turn the switch on and off by means of low voltage logic, regardless of the voltages on the switch terminals. The device and method of the invention enables the switching of high voltage loads operating at arbitrary or floating voltages relative to the low voltage power supply and ground, and provides on/off control of the switch with ordinary low voltage logic levels. The invention provides bidirectional switching without conducting through the parasitic body diodes of the CMOS devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.