Apparatuses, methods, and systems for stochastic memory circuits using magnetic tunnel junctions
US9953690B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2017 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Jun 23, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments include apparatuses, systems, and methods including a memory apparatus including a plurality of bit cells, wherein each of the plurality of bit cells correspond to a respective weight value and include a switch device that has a magnetic tunnel junction (MTJ) or other suitable resistive memory element to produce stochastic switching. In embodiments, the switch device may produce a switching output according to a stochastic switching probability of the switch device. In embodiments, a bit line or a source line passes a current across the MTJ for a switching time associated with the stochastic switching probability to produce the switching output which enables a determination of whether the respective weight value is to be updated. Other embodiments may also be described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.