Method of manufacturing element chip, method of manufacturing electronic component-mounted structure, and electronic component-mounted structure
US9953906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2017 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Jan 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a plasma processing step that is used in the method of manufacturing the element chip for manufacturing a plurality of element chips by dividing a substrate which has a plurality of element regions and of which an element surface is covered by insulating film, the substrate is divided into element chips by exposing the substrate to a first plasma, element chips having first surface, second surface, and side surface are held spaced from each other on carrier, insulating film is in a state of being exposed, recessed portions are formed by retreating insulating film by exposing element chips to second plasma for ashing, and then recessed portions are covered by protection films by third plasma for formation of the protection film, thereby suppressing creep-up of the conductive material to side surface in the mounting step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.