Die-bonding layer formation film, processed product having die-bonding layer formation film attached thereto, and semiconductor device
US9953946B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2015 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Mar 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A die-bonding layer formation film to be used for fixing a processed product to an adherend, includes an adhesive layer, wherein, the storage elastic modulus has a local minimum value at a temperature within a range of 80° C. to 150° C., wherein the adhesive layer has a shear strength to a peeling strength test substrate of 20 N/2 mm□ [N/(2 mm×2 mm)] or more and 50 N/2 mm□ [N/(2 mm×2 mm)] or less, wherein the shear strength is measured after the processed product is placed above the peeling strength test substrate via the die-bonding layer formation film and the die-bonding layer formation film on the peeling strength test substrate is heated at 175° C. for 1 hour and then further maintained under an environment of 250° C. for 30 seconds. Bubbles (voids) are unlikely to grow at the boundary between the adhesive layer and an adherend even when subjected to thermal history.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.