Semiconductor device and electronic device
US9954003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2017 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Feb 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/431
Abstract
A semiconductor device with high design flexibility is provided. A first transistor and a second transistor having electrical characteristics different from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. For example, semiconductor materials with different electron affinities are used for a semiconductor layer in which a channel of the first transistor is formed and a semiconductor layer in which a channel of the second transistor is formed. This allows the threshold voltages of the first transistor and the second transistor to differ from each other. Forming a gate electrode using a damascene process enables miniaturization and high density of the transistors. Furthermore, a highly-integrated semiconductor device is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.