Thin film transistor substrate and display using the same
US9954014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2016 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Aug 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.