Low dislocation density III-nitride semiconductor component
US9954089B2 · kind B2 · utility
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4References
13Claims
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Key dates
| Filing date | Jun 20, 2016 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Jun 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are disclosed herein various implementations of a semiconductor component including a protrusion propagation body. The semiconductor component includes a substrate, a III-Nitride intermediate stack including the protrusion propagation body situated over the substrate, a III-Nitride buffer layer situated over the group III-V intermediate stack, and a III-Nitride device fabricated over the group III-V buffer layer. The protrusion propagation body includes at least a protrusion generating layer and two or more protrusion spreading multilayers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.