Patent · US Active

Method of producing a high-voltage semiconductor drift device

US9954118B2 · kind B2 · utility

0Cited by

3References

9Claims

0Family size

Assignee

AMS AG · AT

Inventor

Martin Knaipp · Kufstein, AT

Key dates

Filing date	Aug 16, 2017
Grant date	Apr 24, 2018
Priority date	—
Expiry date	Aug 16, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The method comprises implanting a deep well of a first type of electrical conductivity provided for a drift region in a substrate of semiconductor material, the deep well of the first type comprising a periphery, implanting a deep well or a plurality of deep wells of a second type of electrical conductivity opposite to the first type of electrical conductivity at the periphery of the deep well of the first type, implanting shallow wells of the first type of electrical conductivity at the periphery of the deep well of the first type, the shallow wells of the first type extending into the deep well of the first type; and implanting shallow wells of the second type of electrical conductivity adjacent to the deep well of the first type between the shallow wells of the first type of electrical conductivity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.